The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.
%0 Journal Article
%1 SCHLERETH2020125602
%A Schlereth, R.
%A Hajer, J.
%A Fürst, L.
%A Schreyeck, S.
%A Buhmann, H.
%A Molenkamp, L.W.
%D 2020
%J J. Cryst. Growth
%K a
%P 125602
%R https://doi.org/10.1016/j.jcrysgro.2020.125602
%T Band edge thermometry for the MBE growth of (Hg,Cd)Te-based materials
%U https://www.sciencedirect.com/science/article/pii/S0022024820301251
%V 537
%X The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.
@article{SCHLERETH2020125602,
abstract = {The material system (Hg,Cd)Te is a prototype system for topological insulators and Dirac semi-metals. Molecular beam epitaxy is the preferred method for the growth of (Hg,Cd)Te epilayer heterostructures and CdTe-HgTe core-shell nanowires. Unfortunately, the high crystalline quality desired for charge transport investigations is only achieved for a very narrow window of the growth temperature. Additionally, the low growth temperature requires a special thermometry. Here, we demonstrate the improvement of the growth of (Hg,Cd)Te epilayer heterostructures and CdTe nanowires by the use of band edge thermometry. We show that even for narrow-gap materials band edge thermometry provides a suitable method to control the temperature directly at the growth front with a high precision and reproducibility, in contrast to a conventionally used thermocouple.},
added-at = {2023-10-31T16:04:29.000+0100},
author = {Schlereth, R. and Hajer, J. and Fürst, L. and Schreyeck, S. and Buhmann, H. and Molenkamp, L.W.},
biburl = {https://www.bibsonomy.org/bibtex/2ec4b03c10e0a7fc5fa836bdc14c0c665/ctqmat},
day = 01,
doi = {https://doi.org/10.1016/j.jcrysgro.2020.125602},
interhash = {dceb90bcdec0e2a6bfb6919c7f5b60e2},
intrahash = {ec4b03c10e0a7fc5fa836bdc14c0c665},
issn = {0022-0248},
journal = {J. Cryst. Growth},
keywords = {a},
month = {05},
pages = 125602,
timestamp = {2023-11-02T17:10:56.000+0100},
title = {Band edge thermometry for the MBE growth of (Hg,Cd)Te-based materials},
url = {https://www.sciencedirect.com/science/article/pii/S0022024820301251},
volume = 537,
year = 2020
}