Abstract
A theoretical scheme describing effects of interfacial profiles on the
properties of confined excitons in InxGa1-xAs/GaAs spherical quantum
dots (QDs) is presented. A two parameter variational method is used to
calculate the heavy-hole and light-hole exciton energy. Our numerical
results show differences in the ground state exciton energy higher than
100 mev due to gradual rather than abrupt interfaces in a 35 Angstrom
QD. (C) 2004 Elsevier B.V. All rights reserved.
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