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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.
S. Lee, J. Lee, I. Park, J. Park, S. Yun, M. Kim, J. Lee, M. Kim, K. Lee, T. Kim, B. Cho, D. Cho, S. Yun, J. Im, H. Yim, K. Kang, S. Jeon, S. Jo, Y. Ahn, S. Joe, S. Kim, D. kyun Woo, J. Park, H. Park, Y. Kim, J. Park, Y. Choi, M. Hirano, J. Ihm, B. Jeong, S. Lee, M. Kim, H. Lee, S. Seo, H. Jeon, C. ho Kim, H. Kim, J. Kim, Y. Yim, H. Kim, D. Byeon, H. Yang, K. Park, K. Kyung, und J. Choi.ISSCC, Seite 138-139. IEEE, (2016)
Metadaten
- BibTeX-Schlüssel
- conf/isscc/LeeLPPYKLKLKCCY16
- Eintragstyp
- inproceedings
- Buchtitel
- ISSCC
- Jahr
- 2016
- Seiten
- 138-139
- Verlag
- IEEE
- BibTeX-Querverweis
- conf/isscc/2016
- ee
- https://doi.org/10.1109/ISSCC.2016.7417945
- isbn
- 978-1-4673-9467-3
- URL
- http://dblp.uni-trier.de/db/conf/isscc/isscc2016.html#LeeLPPYKLKLKCCY16
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%1 conf/isscc/LeeLPPYKLKLKCCY16
%A Lee, Seungjae
%A Lee, Jin-Yub
%A Park, Il-Han
%A Park, Jong-Yeol
%A Yun, Sung-Won
%A Kim, Minsu
%A Lee, Jong-Hoon
%A Kim, Min-Seok
%A Lee, Kangbin
%A Kim, Taeeun
%A Cho, Byungkyu
%A Cho, Dooho
%A Yun, Sangbum
%A Im, Jung-No
%A Yim, Hyejin
%A Kang, Kyung-Hwa
%A Jeon, Suchang
%A Jo, Sungkyu
%A Ahn, Yang-Lo
%A Joe, Sung-Min
%A Kim, Suyong
%A kyun Woo, Deok
%A Park, Jiyoon
%A Park, Hyun Wook
%A Kim, Youngmin
%A Park, Jonghoon
%A Choi, Yongsu
%A Hirano, Makoto
%A Ihm, Jeong-Don
%A Jeong, Byunghoon
%A Lee, Seon-Kyoo
%A Kim, Moosung
%A Lee, Hokil
%A Seo, Sungwhan
%A Jeon, Hongsoo
%A ho Kim, Chan
%A Kim, Hyunggon
%A Kim, Jintae
%A Yim, Yongsik
%A Kim, Hoosung
%A Byeon, Dae-Seok
%A Yang, Hyang-Ja
%A Park, Ki-Tae
%A Kyung, Kyehyun
%A Choi, Jeong-Hyuk
%B ISSCC
%D 2016
%I IEEE
%K dblp
%P 138-139
%T 7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2016.html#LeeLPPYKLKLKCCY16
%@ 978-1-4673-9467-3
@inproceedings{conf/isscc/LeeLPPYKLKLKCCY16,
added-at = {2024-10-06T00:00:00.000+0200},
author = {Lee, Seungjae and Lee, Jin-Yub and Park, Il-Han and Park, Jong-Yeol and Yun, Sung-Won and Kim, Minsu and Lee, Jong-Hoon and Kim, Min-Seok and Lee, Kangbin and Kim, Taeeun and Cho, Byungkyu and Cho, Dooho and Yun, Sangbum and Im, Jung-No and Yim, Hyejin and Kang, Kyung-Hwa and Jeon, Suchang and Jo, Sungkyu and Ahn, Yang-Lo and Joe, Sung-Min and Kim, Suyong and kyun Woo, Deok and Park, Jiyoon and Park, Hyun Wook and Kim, Youngmin and Park, Jonghoon and Choi, Yongsu and Hirano, Makoto and Ihm, Jeong-Don and Jeong, Byunghoon and Lee, Seon-Kyoo and Kim, Moosung and Lee, Hokil and Seo, Sungwhan and Jeon, Hongsoo and ho Kim, Chan and Kim, Hyunggon and Kim, Jintae and Yim, Yongsik and Kim, Hoosung and Byeon, Dae-Seok and Yang, Hyang-Ja and Park, Ki-Tae and Kyung, Kyehyun and Choi, Jeong-Hyuk},
biburl = {https://www.bibsonomy.org/bibtex/2841adf66164ae1730fbb8d07e5b9c6ac/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2016},
ee = {https://doi.org/10.1109/ISSCC.2016.7417945},
interhash = {608b6391a8eadce7e00d1e268002957f},
intrahash = {841adf66164ae1730fbb8d07e5b9c6ac},
isbn = {978-1-4673-9467-3},
keywords = {dblp},
pages = {138-139},
publisher = {IEEE},
timestamp = {2024-10-07T09:14:24.000+0200},
title = {7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2016.html#LeeLPPYKLKLKCCY16},
year = 2016
}