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ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS OF THE CIRCUIT

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International Journal on Organic Electronics (IJOE), 5 (1/2/3/4): 19 (октября 2016)
DOI: 10.5121/ijoe.2016.5401

Аннотация

We introduce an approach for increasing density of voltage restore elements. The approach based on manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration. Several required sections of the layer should be doped by diffusion or ion implantation. After that dopants and/or radiation defects should be annealed.

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