%0 Journal Article %1 BER01 %A Bertrand, G. %A Delage, Christelle %A Bafleur, Marise %A Nolhier, Nicolas %A Dorkel, Jean-Marie %A Nguyen, Quang %A Mauran, Nicolas %A Trémouilles, D. %A Perdu, Philippe %D 2001 %J IEEE J.~Solid~State~Circuits %K imported %N 9 %P 1373--1381 %T Analysis and Compact Modeling of a Vertical Grounded-Base n-p-n Bipolar Transistor Used as ESD Protection in a Smart Power Technology %V 36

@article{BER01, added-at = {2009-03-03T17:19:04.000+0100}, author = {Bertrand, G. and Delage, Christelle and Bafleur, Marise and Nolhier, Nicolas and Dorkel, Jean-Marie and Nguyen, Quang and Mauran, Nicolas and Tr{\'e}mouilles, D. and Perdu, Philippe}, biburl = {https://www.bibsonomy.org/bibtex/23497310985b33162deb83bde3c428a21/bronckobuster}, interhash = {68163f037b26a6a59041dea85baeaf11}, intrahash = {3497310985b33162deb83bde3c428a21}, journal = {IEEE J.~Solid~State~Circuits}, keywords = {imported}, month = {September}, number = 9, pages = {1373--1381}, timestamp = {2009-03-03T17:19:50.000+0100}, title = {Analysis and Compact Modeling of a Vertical Grounded-Base n-p-n Bipolar Transistor Used as ESD Protection in a Smart Power Technology}, volume = 36, year = 2001 }