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11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.
C. Kim, J. Cho, W. Jeong, I. Park, H. Park, D. Kim, D. Kang, S. Lee, J. Lee, W. Kim, J. Park, Y. Ahn, J. Lee, J. Lee, S. Kim, H. Yoon, J. Yu, N. Choi, Y. Kwon, N. Kim, H. Jang, J. Park, S. Song, Y. Park, J. Bang, S. Hong, B. Jeong, H. Kim, C. Lee, Y. Min, I. Lee, I. Kim, S. Kim, D. Yoon, K. Kim, Y. Choi, M. Kim, H. Kim, P. Kwak, J. Ihm, D. Byeon, J. Lee, K. Park, und K. Kyung.ISSCC, Seite 202-203. IEEE, (2017)
Metadaten
- BibTeX-Schlüssel
- conf/isscc/KimCJPPKKLLKPAL17
- Eintragstyp
- inproceedings
- Buchtitel
- ISSCC
- Jahr
- 2017
- Seiten
- 202-203
- Verlag
- IEEE
- BibTeX-Querverweis
- conf/isscc/2017
- ee
- https://doi.org/10.1109/ISSCC.2017.7870331
- isbn
- 978-1-5090-3758-2
- URL
- http://dblp.uni-trier.de/db/conf/isscc/isscc2017.html#KimCJPPKKLLKPAL17
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%1 conf/isscc/KimCJPPKKLLKPAL17
%A Kim, Chulbum
%A Cho, Ji-Ho
%A Jeong, Woopyo
%A Park, Il-Han
%A Park, Hyun Wook
%A Kim, Doo-Hyun
%A Kang, Daewoon
%A Lee, Sunghoon
%A Lee, Ji-Sang
%A Kim, Wontae
%A Park, Jiyoon
%A Ahn, Yang-Lo
%A Lee, Jiyoung
%A Lee, Jong-Hoon
%A Kim, Seungbum
%A Yoon, Hyun-Jun
%A Yu, Jaedoeg
%A Choi, Nayoung
%A Kwon, Yelim
%A Kim, Nahyun
%A Jang, Hwajun
%A Park, Jonghoon
%A Song, Seunghwan
%A Park, Yongha
%A Bang, Jinbae
%A Hong, Sangki
%A Jeong, Byunghoon
%A Kim, Hyun-Jin
%A Lee, Chunan
%A Min, Young-Sun
%A Lee, Inryul
%A Kim, In-Mo
%A Kim, Sunghoon
%A Yoon, Dongkyu
%A Kim, Ki-Sung
%A Choi, Youngdon
%A Kim, Moosung
%A Kim, Hyunggon
%A Kwak, Pansuk
%A Ihm, Jeong-Don
%A Byeon, Dae-Seok
%A Lee, Jin-Yub
%A Park, Ki-Tae
%A Kyung, Kyehyun
%B ISSCC
%D 2017
%I IEEE
%K dblp
%P 202-203
%T 11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.
%U http://dblp.uni-trier.de/db/conf/isscc/isscc2017.html#KimCJPPKKLLKPAL17
%@ 978-1-5090-3758-2
@inproceedings{conf/isscc/KimCJPPKKLLKPAL17,
added-at = {2023-02-23T00:00:00.000+0100},
author = {Kim, Chulbum and Cho, Ji-Ho and Jeong, Woopyo and Park, Il-Han and Park, Hyun Wook and Kim, Doo-Hyun and Kang, Daewoon and Lee, Sunghoon and Lee, Ji-Sang and Kim, Wontae and Park, Jiyoon and Ahn, Yang-Lo and Lee, Jiyoung and Lee, Jong-Hoon and Kim, Seungbum and Yoon, Hyun-Jun and Yu, Jaedoeg and Choi, Nayoung and Kwon, Yelim and Kim, Nahyun and Jang, Hwajun and Park, Jonghoon and Song, Seunghwan and Park, Yongha and Bang, Jinbae and Hong, Sangki and Jeong, Byunghoon and Kim, Hyun-Jin and Lee, Chunan and Min, Young-Sun and Lee, Inryul and Kim, In-Mo and Kim, Sunghoon and Yoon, Dongkyu and Kim, Ki-Sung and Choi, Youngdon and Kim, Moosung and Kim, Hyunggon and Kwak, Pansuk and Ihm, Jeong-Don and Byeon, Dae-Seok and Lee, Jin-Yub and Park, Ki-Tae and Kyung, Kyehyun},
biburl = {https://www.bibsonomy.org/bibtex/2eec532fc524f0ebb7c969fdcb78a06e5/dblp},
booktitle = {ISSCC},
crossref = {conf/isscc/2017},
ee = {https://doi.org/10.1109/ISSCC.2017.7870331},
interhash = {7dee43aa1e0eb2f6cb4bf497bfd2146b},
intrahash = {eec532fc524f0ebb7c969fdcb78a06e5},
isbn = {978-1-5090-3758-2},
keywords = {dblp},
pages = {202-203},
publisher = {IEEE},
timestamp = {2024-04-10T11:03:47.000+0200},
title = {11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.},
url = {http://dblp.uni-trier.de/db/conf/isscc/isscc2017.html#KimCJPPKKLLKPAL17},
year = 2017
}