%0 Conference Paper %1 conf/ises/SoniSYAYS17 %A Soni, Deepak %A Sharma, Dheeraj %A Yadav, Shivendra %A Aslam, Mohd. %A Yadav, Dharmendra Singh %A Sharma, Neeraj %B iNIS %D 2017 %I IEEE %K dblp %P 190-194 %T Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor. %U http://dblp.uni-trier.de/db/conf/ises/inis2017.html#SoniSYAYS17 %@ 978-1-5386-1356-6

@inproceedings{conf/ises/SoniSYAYS17, added-at = {2024-10-06T00:00:00.000+0200}, author = {Soni, Deepak and Sharma, Dheeraj and Yadav, Shivendra and Aslam, Mohd. and Yadav, Dharmendra Singh and Sharma, Neeraj}, biburl = {https://www.bibsonomy.org/bibtex/2d6ddf86ffb6e449b20ad76ec5a02e720/dblp}, booktitle = {iNIS}, crossref = {conf/ises/2017}, ee = {https://doi.ieeecomputersociety.org/10.1109/iNIS.2017.47}, interhash = {7f6358a08047fbfb95fb2af99e23d25d}, intrahash = {d6ddf86ffb6e449b20ad76ec5a02e720}, isbn = {978-1-5386-1356-6}, keywords = {dblp}, pages = {190-194}, publisher = {IEEE}, timestamp = {2024-10-07T10:09:34.000+0200}, title = {Gate Metal Work Function Engineering for the Improvement of Electrostatic Behaviour of Doped Tunnel Field Effect Transistor.}, url = {http://dblp.uni-trier.de/db/conf/ises/inis2017.html#SoniSYAYS17}, year = 2017 }