%0 Conference Paper %1 conf/imw2/ChenLHWL23 %A Chen, Wei-Chen %A Lue, Hang-Ting %A Hsu, Tzu-Hsuan %A Wang, Keh-Chung %A Lu, Chih-Yuan %B IMW %D 2023 %I IEEE %K dblp %P 1-4 %T A Simulation Study of Scaling Capability toward 10nm for the 3D Stackable Gate-Controlled Thyristor (GCT) DRAM Device. %U http://dblp.uni-trier.de/db/conf/imw2/imw2023.html#ChenLHWL23 %@ 978-1-6654-7459-7

@inproceedings{conf/imw2/ChenLHWL23, added-at = {2023-06-16T00:00:00.000+0200}, author = {Chen, Wei-Chen and Lue, Hang-Ting and Hsu, Tzu-Hsuan and Wang, Keh-Chung and Lu, Chih-Yuan}, biburl = {https://www.bibsonomy.org/bibtex/216f7c0f3865461c7addcd33a0c2ab0a4/dblp}, booktitle = {IMW}, crossref = {conf/imw2/2023}, ee = {https://doi.org/10.1109/IMW56887.2023.10145823}, interhash = {9507fc6e45688eee9df55d6fcad7d51e}, intrahash = {16f7c0f3865461c7addcd33a0c2ab0a4}, isbn = {978-1-6654-7459-7}, keywords = {dblp}, pages = {1-4}, publisher = {IEEE}, timestamp = {2024-04-09T19:34:03.000+0200}, title = {A Simulation Study of Scaling Capability toward 10nm for the 3D Stackable Gate-Controlled Thyristor (GCT) DRAM Device.}, url = {http://dblp.uni-trier.de/db/conf/imw2/imw2023.html#ChenLHWL23}, year = 2023 }