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A Simulation Study of Scaling Capability toward 10nm for the 3D Stackable Gate-Controlled Thyristor (GCT) DRAM Device.

, , , , и . IMW, стр. 1-4. IEEE, (2023)

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Tien-Yi Tzung

Mathäus Tzurmbakis

Hsuan-Erh Chen

Eric Hsu

Yüanfang Hsü

 

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