%0 Journal Article %1 journals/ieicet/IkawaYHAO10 %A Ikawa, Yusuke %A Yuasa, Yorihide %A Hu, Cheng-Yu %A Ao, Jin-Ping %A Ohno, Yasuo %D 2010 %J IEICE Trans. Electron. %K dblp %N 8 %P 1218-1224 %T 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection. %U http://dblp.uni-trier.de/db/journals/ieicet/ieicet93c.html#IkawaYHAO10 %V 93-C

@article{journals/ieicet/IkawaYHAO10, added-at = {2020-04-11T00:00:00.000+0200}, author = {Ikawa, Yusuke and Yuasa, Yorihide and Hu, Cheng-Yu and Ao, Jin-Ping and Ohno, Yasuo}, biburl = {https://www.bibsonomy.org/bibtex/2e2bfad973cc8f6c7beec0184894c2dcd/dblp}, ee = {http://search.ieice.org/bin/summary.php?id=e93-c_8_1218}, interhash = {b411f9044fc2b7643a6e2365f306bc07}, intrahash = {e2bfad973cc8f6c7beec0184894c2dcd}, journal = {IEICE Trans. Electron.}, keywords = {dblp}, number = 8, pages = {1218-1224}, timestamp = {2020-04-14T12:02:23.000+0200}, title = {2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection.}, url = {http://dblp.uni-trier.de/db/journals/ieicet/ieicet93c.html#IkawaYHAO10}, volume = {93-C}, year = 2010 }