%0 Journal Article %1 WOS:A1995RH05800019 %A CONSUELO, M %A LIMA, A %A FARIAS, GA %A FREIRE, VN %C 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND %D 1995 %I ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD %J SUPERLATTICES AND MICROSTRUCTURES %K imported %N 2 %P 235-239 %T INTERFACE EFFECTS IN THE HIGH-ELECTRIC-FIELD RESONANCES OF SINGLE ALXGA1-XAS NON-ABRUPT BARRIERS IN GAAS %V 17 %X The influence of nonabrupt interfaces in the high electric field resonances of single AlxGa1-xAs barriers in GaAs is studied. The resonances are considerably smoothed when interfacial widths are as small as two GaAs lattice parameters. Several resonances in the transmission coefficient of a 0.154 eV electron through a non-abrupt AlxGa1-xAs single barrier in GaAs, with height of 240 meV and 200 Angstrom of width, can even disappear if interfacial widths of four GaAs lattice parameters are considered. Interface effects are shown to be more important for heavy holes than for electrons.

@article{WOS:A1995RH05800019, abstract = {The influence of nonabrupt interfaces in the high electric field resonances of single AlxGa1-xAs barriers in GaAs is studied. The resonances are considerably smoothed when interfacial widths are as small as two GaAs lattice parameters. Several resonances in the transmission coefficient of a 0.154 eV electron through a non-abrupt AlxGa1-xAs single barrier in GaAs, with height of 240 meV and 200 Angstrom of width, can even disappear if interfacial widths of four GaAs lattice parameters are considered. Interface effects are shown to be more important for heavy holes than for electrons.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {24-28 OVAL RD, LONDON NW1 7DX, ENGLAND}, author = {CONSUELO, M and LIMA, A and FARIAS, GA and FREIRE, VN}, biburl = {https://www.bibsonomy.org/bibtex/22e8497812ee01199be4a45b1dc4fc5e8/ppgfis_ufc_br}, interhash = {c7ff20b4fda84569a5da317a8fa0a2f6}, intrahash = {2e8497812ee01199be4a45b1dc4fc5e8}, issn = {0749-6036}, journal = {SUPERLATTICES AND MICROSTRUCTURES}, keywords = {imported}, number = 2, pages = {235-239}, publisher = {ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {INTERFACE EFFECTS IN THE HIGH-ELECTRIC-FIELD RESONANCES OF SINGLE ALXGA1-XAS NON-ABRUPT BARRIERS IN GAAS}, tppubtype = {article}, volume = 17, year = 1995 }