%0 Conference Paper %1 conf/vdat/KushwahV12 %A Kushwah, Chandrabhan %A Vishvakarma, Santosh Kumar %B VDAT %D 2012 %E Rahaman, Hafizur %E Chattopadhyay, Sanatan %E Chattopadhyay, Santanu %I Springer %K dblp %P 139-146 %T Ultra-Low Power Sub-threshold SRAM Cell Design to Improve Read Static Noise Margin. %U http://dblp.uni-trier.de/db/conf/vdat/vdat2012.html#KushwahV12 %V 7373 %@ 978-3-642-31493-3

@inproceedings{conf/vdat/KushwahV12, added-at = {2019-10-19T00:00:00.000+0200}, author = {Kushwah, Chandrabhan and Vishvakarma, Santosh Kumar}, biburl = {https://www.bibsonomy.org/bibtex/2ecd8faf7aa75391dc934675d3a4f472b/dblp}, booktitle = {VDAT}, crossref = {conf/vdat/2012}, editor = {Rahaman, Hafizur and Chattopadhyay, Sanatan and Chattopadhyay, Santanu}, ee = {https://doi.org/10.1007/978-3-642-31494-0_16}, interhash = {debae0437074ead53063567c439b42ea}, intrahash = {ecd8faf7aa75391dc934675d3a4f472b}, isbn = {978-3-642-31493-3}, keywords = {dblp}, pages = {139-146}, publisher = {Springer}, series = {Lecture Notes in Computer Science}, timestamp = {2019-10-23T11:40:26.000+0200}, title = {Ultra-Low Power Sub-threshold SRAM Cell Design to Improve Read Static Noise Margin.}, url = {http://dblp.uni-trier.de/db/conf/vdat/vdat2012.html#KushwahV12}, volume = 7373, year = 2012 }