%0 Journal Article %1 WOS:000224739100098 %A de Sousa, JS %A Freire, JAK %A Freire, VN %A da Silva, EF %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 2004 %I ELSEVIER %J APPLIED SURFACE SCIENCE %K Si/SiO2} Stark dots; quantum shift; wells; {quantum %N 1-4 %P 548-552 %R 10.1016/j.apsusc.2004.06.156 %T Differences of Stark shift behavior in Si/SiO2 quantum wells and quantum dots %V 237 %X We report strong differences on the quantum-confined Stark effect (QCSE) behavior between Si/SiO2 quantum dots (QDs) and quantum wells (QWs). In QWs, the QCSE exhibits strong non-linearities, which can be fitted to second and/or fourth order polynomials with respect to the applied electric field (E-F) depending on the QW size and energy level. In contrast, for QDs the QCSE behavior is practically linear with the applied field. These differences are explained by means of the time-independent perturbation theory, where we show that for QWs, the parity differences between the (ID) wavefunctions and the perturbation potential make the first and third order corrections to vanish, while this parity difference is relaxed in QDs, making first order corrections (linear in E-F) to prevail with respect to the high-order contributions. (C) 2004 Elsevier B.V. All rights reserved.

@article{WOS:000224739100098, abstract = {We report strong differences on the quantum-confined Stark effect (QCSE) behavior between Si/SiO2 quantum dots (QDs) and quantum wells (QWs). In QWs, the QCSE exhibits strong non-linearities, which can be fitted to second and/or fourth order polynomials with respect to the applied electric field (E-F) depending on the QW size and energy level. In contrast, for QDs the QCSE behavior is practically linear with the applied field. These differences are explained by means of the time-independent perturbation theory, where we show that for QWs, the parity differences between the (ID) wavefunctions and the perturbation potential make the first and third order corrections to vanish, while this parity difference is relaxed in QDs, making first order corrections (linear in E-F) to prevail with respect to the high-order contributions. (C) 2004 Elsevier B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {de Sousa, JS and Freire, JAK and Freire, VN and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2c322adb79c9e1be0838b57e67d97c037/ppgfis_ufc_br}, doi = {10.1016/j.apsusc.2004.06.156}, interhash = {f3371579380a29bde03ddc00d5536fa0}, intrahash = {c322adb79c9e1be0838b57e67d97c037}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {Si/SiO2} Stark dots; quantum shift; wells; {quantum}, note = {7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, JAPAN, NOV 16-20, 2003}, number = {1-4}, organization = {Japan Soc Appl Phys; Minist Educ, Culture, Sports, Sci & Technol; Commemorat Assoc Japan World Exposit 1970; Natl Inst Mat Sci; Nara Convent Bur}, pages = {548-552}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Differences of Stark shift behavior in Si/SiO2 quantum wells and quantum dots}, tppubtype = {article}, volume = 237, year = 2004 }