Author of the publication

Vertically-stacked double-gate nanowire FETs with controllable polarity: from devices to regular ASICs.

, , , , , , and . DATE, page 625-630. EDA Consortium San Jose, CA, USA / ACM DL, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology., , , , , , , , and . IEEE J. Emerg. Sel. Topics Circuits Syst., 6 (3): 339-351 (2016)Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review., , and . Proc. IEEE, 100 (6): 2008-2020 (2012)Alternative design methodologies for the next generation logic switch., , , and . ICCAD, page 231-234. IEEE Computer Society, (2011)Memristive devices fabricated with silicon nanowire schottky barrier transistors., , , , and . ISCAS, page 9-12. IEEE, (2010)Design aspects of carry lookahead adders with vertically-stacked nanowire transistors., , , and . ISCAS, page 1715-1718. IEEE, (2010)Vertically-stacked double-gate nanowire FETs with controllable polarity: from devices to regular ASICs., , , , , , and . DATE, page 625-630. EDA Consortium San Jose, CA, USA / ACM DL, (2013)Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology., , , , and . ISCAS, page 9-12. IEEE, (2015)GMS: Generic memristive structure for non-volatile FPGAs., , , , and . VLSI-SoC, page 94-98. IEEE, (2012)Process/design co-optimization of regular logic tiles for double-gate silicon nanowire transistors., , , , , , and . NANOARCH, page 55-60. ACM, (2012)Towards structured ASICs using polarity-tunable Si nanowire transistors., , , , , , and . DAC, page 123:1-123:4. ACM, (2013)