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Disambiguation of "Degraeve, Robin"

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A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS.

, , , , , and . A-SSCC, page 157-160. IEEE, (2018)

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Klaus-P Robiné

Frank-Jürgen Robine

Claus Robinski

Yohan Robinson

Vincent Robin

 

Other publications of authors with the same name

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology., , , , , and . IRPS, page 1-6. IEEE, (2023)Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks., , , , and . IRPS, page 27-1. IEEE, (2022)Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , and . ESSDERC, page 146-149. IEEE, (2018)Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study., , , , , and . Microelectron. Reliab., 42 (4-5): 555-564 (2002)Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications., , , , , , , and . IRPS, page 1-7. IEEE, (2024)A multi-bit/cell PUF using analog breakdown positions in CMOS., , , , , , , and . IRPS, page 2-1. IEEE, (2018)Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current., , , , , , and . ESSDERC, page 262-265. IEEE, (2015)Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations., , , , , and . IRPS, page 1-7. IEEE, (2023)Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery., , , , , , , , , and 7 other author(s). IRPS, page 1-6. IEEE, (2022)A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability., , , , , and . IRPS, page 1-7. IEEE, (2022)