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A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications.

, , , , , and . ESSCIRC, page 369-372. IEEE, (2021)

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Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology., , , and . RWS, page 1-3. IEEE, (2019)RF Front-End Impairments for Ultra-Broadband Wireless Communication above 200 GHz., , and . ISWCS, page 335-339. IEEE, (2019)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS., , , , , , , , and . ISSCC, page 418-420. IEEE, (2018)Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz., , , , and . NANOCOM, page 25:1-25:2. ACM, (2017)Signal-processing Challenges in Leveraging 100 Gb/s Wireless THz., , , , , and . 6G SUMMIT, page 1-5. IEEE, (2020)Electronic textiles: A platform for pervasive computing., , , , , , , , , and 7 other author(s). Proc. IEEE, 91 (12): 1995-2018 (2003)100 Gbps and beyond: Hardware in the Loop experiments with PSSS modulation using 230 GHz RF frontend., , , , , and . WPNC, page 1-5. IEEE, (2018)A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications., , , , , and . ESSCIRC, page 369-372. IEEE, (2021)Current Status of Terahertz Integrated Circuits - From Components to Systems., , , , , and . BCICTS, page 1-7. IEEE, (2018)A 65 Gbps QPSK one meter wireless link operating at a 225-255 GHz tunable carrier in a SiGe HBT technology., , , , and . RWS, page 146-149. IEEE, (2018)