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A 32-GHz Nested-PLL-Based FMCW Modulator With 2.16-GHz Bandwidth in a 65-nm CMOS Process.

, , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 28 (7): 1600-1609 (2020)

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An integrated 60 GHz differential-fed patch array antenna in low-cost QFN package., , , , , , and . Microelectron. J., (2023)A V-band injection locking tripler with 26.8% locking range and 7.3-dBm output power in 65 nm CMOS., , , , , , and . Microelectron. J., (2024)A 32-GHz Nested-PLL-Based FMCW Modulator With 2.16-GHz Bandwidth in a 65-nm CMOS Process., , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 28 (7): 1600-1609 (2020)mmWave communications for 5G: implementation challenges and advances., , , , , , , , , and . Sci. China Inf. Sci., 61 (2): 021301:1-021301:19 (2018)20.3 An 86-to-94.3GHz transmitter with 15.3dBm output power and 9.6% efficiency in 65nm CMOS., , and . ISSCC, page 346-347. IEEE, (2016)A 60GHz Digitally-Controlled Differential Reflection-type Phase Shifter in 65-nm CMOS with Low Phase Error., , and . ASICON, page 1-4. IEEE, (2019)5 Gbps 0.35-μm CMOS driver for laser diode or optical modulator., , , , and . ESSCIRC, page 279-282. IEEE, (2004)A Ku-band transmitter front-end in 65-nm CMOS with >45-dBc image-rejection ratio and >43-dBc LOFT suppression., , , , , , , and . IEICE Electron. Express, 20 (15): 20230226 (2023)A 226 GHz Coupled Harmonic VCO with 9.34% Tuning Range Utilizing Three-Coil Transformer with Switched Inductor in 65nm CMOS., , , , and . A-SSCC, page 1-3. IEEE, (2023)A 90nm CMOS mm-wave VCO using an LC tank with inductive division., , and . ESSCIRC, page 238-241. IEEE, (2008)