A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI.
T. Yoshimasu, M. Fang, and T. Sugiura. IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 104-A (2):
477-483(2021)
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