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Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI., , , , , , , , , and 2 other author(s). ESSDERC, page 199-202. IEEE, (2021)Lifting Transformational Models of Product Lines: A Case Study., , and . ICMT@TOOLS, volume 5063 of Lecture Notes in Computer Science, page 16-30. Springer, (2008)Lifting transformational models of product lines: a case study., , , and . Softw. Syst. Model., 9 (3): 359-373 (2010)RFCMOS technology from 0.25μm to 65nm: the state of the art., , , , , , , , , and 4 other author(s). CICC, page 217-224. IEEE, (2004)Product applications and technology directions with SiGe BiCMOS., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 38 (9): 1471-1478 (2003)45-nm silicon-on-insulator CMOS technology integrating embedded DRAM for high-performance server and ASIC applications., , , , , , , , , and 10 other author(s). IBM J. Res. Dev., 55 (3): 5 (2011)40-Gb/s circuits built from a 120-GHz fT SiGe technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 37 (9): 1106-1114 (2002)Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs., , , , , , , , , and 7 other author(s). CICC, page 559-566. IEEE, (2001)Two CMOS Metastability Sensors., , , and . ITC, page 140-144. IEEE Computer Society, (1986)