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Understanding Read Disturbance in High Bandwidth Memory: An Experimental Analysis of Real HBM2 DRAM Chips., , , , , , , , и . CoRR, (2023)ABACuS: All-Bank Activation Counters for Scalable and Low Overhead RowHammer Mitigation., , , , , , , , и . CoRR, (2023)CoMeT: Count-Min-Sketch-based Row Tracking to Mitigate RowHammer at Low Cost., , , , , , , и . HPCA, стр. 593-612. IEEE, (2024)Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions., , , , , , и . HPCA, стр. 560-577. IEEE, (2024)Simultaneous Many-Row Activation in Off-the-Shelf DRAM Chips: Experimental Characterization and Analysis., , , , , , , , , и 1 other автор(ы). DSN, стр. 99-114. IEEE, (2024)RowPress Vulnerability in Modern DRAM Chips., , , , , , , , и . IEEE Micro, 44 (4): 60-69 (июля 2024)Ramulator 2.0: A Modern, Modular, and Extensible DRAM Simulator., , , , , и . IEEE Comput. Archit. Lett., 23 (1): 112-116 (января 2024)Uncovering In-DRAM RowHammer Protection Mechanisms: A New Methodology, Custom RowHammer Patterns, and Implications., , , , , и . MICRO, стр. 1198-1213. ACM, (2021)Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips., , , , , , , , и . DSN, стр. 75-89. IEEE, (2024)RowPress: Amplifying Read Disturbance in Modern DRAM Chips., , , , , , , , и . ISCA, стр. 28:1-28:18. ACM, (2023)