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Disambiguation of "Alian, AliReza"

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DC Reliability Study of $high-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers.

, , , , , , , , , , and . IRPS, page 1-9. IEEE, (2024)

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Schapur Aliani

Huschang Aliani

Lucia Alianelli

Farhad Aliani

Schahin Aliani

 

Other publications of authors with the same name

DC Reliability Study of $high-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers., , , , , , , , , and 1 other author(s). IRPS, page 1-9. IEEE, (2024)CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2021)Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer., , , , , , , , , and 4 other author(s). ESSDERC, page 384-387. IEEE, (2022)Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications., , , , , , , , , and 3 other author(s). IRPS, page 1-8. IEEE, (2020)On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices., , , , , , , , and . IRPS, page 1-8. IEEE, (2021)Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications., , , , , , , and . IRPS, page 11. IEEE, (2022)A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies., , , , , , , , , and 1 other author(s). IRPS, page 1-5. IEEE, (2021)Beyond-Si materials and devices for more Moore and more than Moore applications., , , , , , , , , and 16 other author(s). ICICDT, page 1-5. IEEE, (2016)ESD characterization of planar InGaAs devices., , , , , , , , , and 7 other author(s). IRPS, page 3. IEEE, (2015)The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices., , , , , , , , , and 2 other author(s). IRPS, page 5. IEEE, (2015)