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High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash.

, , , , , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth., , , , , , , , , and 20 other author(s). ISSCC, page 46-48. IEEE, (2012)Development of 7th generation 3D VNAND Flash Product with COP structure for Growing Demand in Storage Market., , , , , , and . ICEIC, page 1-4. IEEE, (2022)Current status and future prospect of Phase Change Memory., , , , , , , , and . ASICON, page 279-282. IEEE, (2011)Process Improvements for 7th Generation 1Tb Quad-Level Cell 3D NAND Flash Memory in Mass Production., , , , , , , , , and 2 other author(s). IMW, page 1-4. IEEE, (2023)High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash., , , , , , , , , and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory., , , , , , , , , and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND., , , , , , , , , and 23 other author(s). IRPS, page 9. IEEE, (2024)BIM-based augmented reality navigation for indoor emergency evacuation., , , , and . Expert Syst. Appl., (2024)