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A 32Mb Embedded Flash Memory based on 28nm with the best Cell Efficiency and Robust Design achievement featuring 13.48Mb/mm2 at 0.85V., , , , , , , и . VLSI Technology and Circuits, стр. 132-133. IEEE, (2022)5nm Low Power SRAM Featuring Dual-Rail Architecture with Voltage-Tracking Assist Circuit for 5G mobile application., , , , , , и . VLSI Circuits, стр. 1-2. IEEE, (2021)Impact of lithography retargeting process on low level interconnect in 20nm technology., , , и . SLIP, стр. 3-10. ACM, (2012)Lithography and design integration - New paradigm for the technology architecture development., , , , и . CICC, стр. 1-4. IEEE, (2012)Standard Cell Design Optimization with Advanced MOL Technology in 3nm GAA Process., , , , , , , , , и 9 other автор(ы). VLSI Technology and Circuits, стр. 363-364. IEEE, (2022)A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application., , , , и . VLSI Circuits, стр. 1-2. IEEE, (2021)24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 338-340. IEEE, (2021)