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"Shift and Match" (S...M) method for channel mobility correction in degraded MOSFETs., , , and . IRPS, page 1-8. IEEE, (2020)An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants., , , , , , and . IEEE Access, (2020)Voltage step stress: a technique for reducing test time of device ageing., , , , and . ICICDT, page 1-4. IEEE, (2019)A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation., , , , , and . IRPS, page 75. IEEE, (2024)Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM., , , , , , and . IRPS, page 1-6. IEEE, (2024)Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs., , , , , , , and . IRPS, page 1-6. IEEE, (2020)ESD characterization of planar InGaAs devices., , , , , , , , , and 7 other author(s). IRPS, page 3. IEEE, (2015)Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED., , , , , , , , , and . IRPS, page 1-7. IEEE, (2024)Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs., , , , , , , and . IRPS, page 72. IEEE, (2024)Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications., , , , , and . IRPS, page 3. IEEE, (2022)