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Static and dynamic power management in 14nm FDSOI technology., , , и . ICICDT, стр. 1-4. IEEE, (2015)Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs., , , , , , , , , и 17 other автор(ы). ESSDERC, стр. 106-109. IEEE, (2014)16MB High Density Embedded PCM macrocell for automotive-grade microcontroller in 28nm FD-SOI, featuring extension to 24MB for Over-The-Air software update., , , , , , , , , и 13 other автор(ы). VLSI Circuits, стр. 1-2. IEEE, (2021)Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI., , , , , , , , , и 14 other автор(ы). VLSI Circuits, стр. 204-. IEEE, (2019)Impact of a 10nm Ultra-Thin BOX (UTBOX) and Ground Plane on FDSOI devices for 32nm node and below., , , , , , , , , и 21 other автор(ы). ESSCIRC, стр. 88-91. IEEE, (2009)Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs., , , , , и . ICICDT, стр. 1-4. IEEE, (2014)28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications., , , , , и . ESSDERC, стр. 7-10. IEEE, (2019)28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications., , , , , , , , , и 11 other автор(ы). VLSI Circuits, стр. 1-2. IEEE, (2016)An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications., , , , , , , и . IMW, стр. 1-4. IEEE, (2023)Improving Ge-rich GST ePCM reliability through BEOL engineering., , , , , , , , , и 27 other автор(ы). ESSDERC, стр. 231-234. IEEE, (2021)