Author of the publication

An Adaptable 6.4 - 32 GS/s Track-and-Hold Amplifier with Track-Mode Masking for High Signal Power Applications in 55 nm SiGe-BiCMOS.

, , , , , , and . BCICTS, page 60-63. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A Time-Interleaved Digital-to-Analog Converter up to 118 GS/s With Integrated Analog Multiplexer in 28-nm FD-SOI CMOS Technology., , , , , and . IEEE J. Solid State Circuits, 59 (3): 908-922 (March 2024)467 Gbit/s Net Bitrate IM/DD Transmission Using 176 GBd PAM-8 Enabled by SiGe AMUX with Excellent Linearity., , , , , , , , , and . OFC, page 1-3. IEEE, (2024)Time-Interleaved Switched Emitter Followers to Extend Front-End Sampling Rates to up to 200 GS/s., , , and . IEEE J. Solid State Circuits, 57 (9): 2599-2610 (2022)Analog Demultiplexer Operating at up to 200 GS/s Using Four Time Interleaved Switched Emitter Followers with a 50% Duty Cycle Clock., , and . BCICTS, page 1-4. IEEE, (2021)64-GS/s 6-Bit Track-and-Hold Circuit with More Than 61 GHz Bandwidth at 1.0 Vpp Input Voltage Swing in 90-nm SiGe BiCMOS Technology., , and . ISCAS, page 1-4. IEEE, (2021)3-Path SiGe BiCMOS power amplifier on thinned substrate for IoT applications., , , , , and . Integr., (2018)Analog Multiply-Accumulate Cell With Multi-Bit Resolution for All-Analog AI Inference Accelerators., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 70 (9): 3509-3521 (September 2023)32-GS/s SiGe Track-and-Hold Amplifier with 58-GHz Bandwidth and -64-dBc to -29-dBc HD3., , and . ICECS, page 1-4. IEEE, (2020)128-GS/s 1-to-4 SiGe Analog Demultiplexer with 36-GHz Bandwidth for 6-bit Data Converters., , , and . BCICTS, page 1-4. IEEE, (2020)An Adaptable 6.4 - 32 GS/s Track-and-Hold Amplifier with Track-Mode Masking for High Signal Power Applications in 55 nm SiGe-BiCMOS., , , , , , and . BCICTS, page 60-63. IEEE, (2018)