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Modelling of hot-carrier degradation and its application for analog design for reliability.

, , , and . Microelectron. J., 40 (9): 1274-1280 (2009)

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Integrated instrumental chain for magnetic pulse measurement in strong static field environment., , , and . ICECS, page 310-313. IEEE, (2006)On the influence of strong magnetic field on MOS transistors., , , , , , , and . ICECS, page 564-567. IEEE, (2016)Virtual prototyping of biosensors involving reaction- diffusion phenomena., , , , and . NEWCAS, page 40-43. IEEE, (2018)Towards a Hall effect magnetic tracking device for MRI., , , , , , and . EMBC, page 2964-2967. IEEE, (2013)Modeling the effect of strong magnetic field on n-type MOSFET in strong inversion., , , , , , , , , and . ICECS, page 637-640. IEEE, (2018)Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability., , , and . ISQED, page 53-58. IEEE Computer Society, (2007)Compact modeling and electro-thermal simulation of hot carriers effect in analog circuits., , and . NEWCAS, page 125-128. IEEE, (2014)Compact modeling of offset sources in vertical hall-effect devices., , , , , and . NEWCAS, page 253-256. IEEE, (2014)Sub-nanosecond gated photon counting for high spatial resolution CMOS imagers., , , , , , and . NEWCAS, page 1-4. IEEE, (2016)CMOS 3D Hall probe for magnetic field measurement in MRI scanner., , , , , , and . NEWCAS, page 517-520. IEEE, (2012)