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A SET quantizer circuit aiming at digital communication system., , , и . ISCAS (5), стр. 860-863. IEEE, (2002)Compact modeling of homojunction tunnel FETs., , , , , , и . MIXDES, стр. 54-57. IEEE, (2014)Few electron devices: towards hybrid CMOS-SET integrated circuits., , , , и . DAC, стр. 88-93. ACM, (2002)Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET., , , и . ESSDERC, стр. 307-310. IEEE, (2016)Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance., , , , и . ESSDERC, стр. 161-164. IEEE, (2012)Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices., , , и . EMBC, стр. 1-7. IEEE, (2023)Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process., , , , , , , , , и 1 other автор(ы). ISSCC, стр. 332-333. IEEE, (2008)Resistive Coupled VO2 Oscillators for Image Recognition., , , , , и . ICRC, стр. 1-7. IEEE, (2018)Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes., , , , и . ESSDERC, стр. 102-105. IEEE, (2017)A CAD Framework for Co-Design and Analysis of CMOS-SET Hybrid Integrated Circuits., , , и . ICCAD, стр. 497-503. IEEE Computer Society / ACM, (2003)