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MOVPE overgrowth of metallic features for realization of 3D metal-semiconductor quantum devices, , , , , , , , and . J.~Crystal Growth, (200)High peak to valley ratios observed in InAs/InP resonant tunneling quantum dot stacks, , , , , , and . Appl.~Phys.~Lett., (2001)Tall stacks of InAs quantum dots in GaAs coupled and contacted as diodes, , , , , and . Proceedings of the 24th Int. Conf. on the Physics of Semiconductors, Singapore, World Scientific, (1999)frueher MIL98; section X.B5 on CD-Rom.Lateral confinement in a resonant tunneling transistor with a buried metallic gate, , , , , , , and . Appl.~Phys.~Lett., (1999)Designed emitter states in resonant tunneling through quantum dots, , , , , , , and . Appl.~Phys.~Lett., (2002)FLUID MOTIONS AND COMPOSITIONAL GRADIENTS PRODUCED BY CRYSTALLIZATION OR MELTING AT VERTICAL BOUNDARIES, and . JOURNAL OF VOLCANOLOGY AND GEOTHERMAL RESEARCH, 11 (2-4): 93--125 (1981)FLOW OF HOT SALINE SOLUTIONS FROM VENTS IN THE SEA-FLOORSOME IMPLICATIONS FOR EXHALATIVE MASSIVE SULFIDE AND OTHER ORE-DEPOSITS - REPLY, and . ECONOMIC Geology, 74 (8): 1895--1895 (1979)FLOW OF HOT SALINE SOLUTIONS FROM VENTS IN SEA-FLOORSOME IMPLICATIONS FOR EXHALATIVE MASSIVE SULFIDE AND OTHER ORE-DEPOSITS, and . ECONOMIC Geology, 73 (6): 1082--1100 (1978)