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First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures.

C. Sung, S. Fan, H. Lue, W. Chen, P. Du, T. Yeh, K. Wang, and C. Lu. IRPS, page 7. IEEE, (2022)

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Lue Wu

Cummins Lue

M Tingart

Wen-tsi Ting

Hang Xu

Other publications of authors with the same name

First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits.C. Sung, H. Lue, W. Chen, T. Hsu, K. Wang, and C. Lu. IMW, page 1-4. IEEE, (2021)Chip Demonstration of a High-Density (43Gb) and High-Search-Bandwidth (300Gb/s) 3D NAND Based In-Memory Search Accelerator for Ternary Content Addressable Memory (TCAM) and Proximity Search of Hamming Distance.C. Hsieh, H. Lue, Y. Li, S. Hung, C. Hung, K. Wang, and C. Lu. VLSI Technology and Circuits, page 1-2. IEEE, (2023)Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution.C. Lo, T. Yeh, W. Chen, H. Lue, K. Wang, C. Lu, Y. Chang, Y. Chen, and C. Liu. IRPS, page 1-6. IEEE, (2020)State-of-the-art flash memory devices and post-flash emerging memories.C. Lu, H. Lue, and Y. Chen. Sci. China Inf. Sci., 54 (5): 1039-1060 (2011)Design of Computing-in-Memory (CIM) with Vertical Split-Gate Flash Memory for Deep Neural Network (DNN) Inference Accelerator.H. Lue, H. Hu, T. Hsu, P. Hsu, K. Wang, and C. Lu. ISCAS, page 1-4. IEEE, (2021)First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures.C. Sung, S. Fan, H. Lue, W. Chen, P. Du, T. Yeh, K. Wang, and C. Lu. IRPS, page 7. IEEE, (2022)Introduction of Non-Volatile Computing In Memory (nvCIM) by 3D NAND Flash for Inference Accelerator of Deep Neural Network (DNN) and the Read Disturb Reliability Evaluation : (Invited Paper).H. Lue, P. Hsu, K. Wang, and C. Lu. IRPS, page 1-6. IEEE, (2020)Microwave penetration depth measurement for high Tc superconductors by dielectric resonators.H. Lue, J. Lue, and T. Tseng. IEEE Trans. Instrum. Meas., 51 (3): 433-439 (2002)Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances.H. Lue, T. Hsu, C. Sung, T. Yeh, K. Wang, and C. Lu. IMW, page 1-4. IEEE, (2021)Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide.P. Jhang, C. Lu, J. Shieh, L. Yang, T. Yang, K. Chen, H. Lue, P. Du, and C. Lu. IRPS, page 24. IEEE, (2024)

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