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Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI., , , , и . ESSDERC, стр. 195-198. IEEE, (2021)Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI., , , , , , , , , и 2 other автор(ы). ESSDERC, стр. 199-202. IEEE, (2021)DNA electrical detection based on inductor resonance frequency in standard CMOS technology., , , , , , и . ESSCIRC, стр. 337-340. IEEE, (2003)Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI., , , , и . NEWCAS, стр. 1-5. IEEE, (2023)Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates., , , , , , , и . ESSDERC, стр. 303-306. IEEE, (2021)CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities., , , , , , , , , и 3 other автор(ы). ICICDT, стр. 1-4. IEEE, (2021)RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications., , , , , , , , , и 3 other автор(ы). IRPS, стр. 1-6. IEEE, (2021)