Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Electron Emission from InAs Quantum Dots, , , , and . Proc. 24th International Conference on the Physics of Semiconductors (ICPS-24), Jerusalem 1998, page 1339. Singapore, World Scientific, (1998)Semiconductor quantum dots for application in diode lasers, , , , , and . Thin Solid Films, (1998)Binary AlAs/GaAs Versus Ternary GaAlAs/GaAs Interfaces --- a Dramatic Difference of Perfection, , , , , , and . Journal of Vacuum Science and Technology B, (1992)Electron escape from InAs quantum dots, , , , , , , and . Phys.~Rev.~B, (1999)Luminescence and Structural Properties of (In,Ga)As/GaAs Quantum Dots, , , , , , , , , and 8 other author(s). Proc. 22nd Int. Conf. Phys. Semicond., (ICPS-22), (Vancouver, Canada, 1994), Singapore, World Scientific, (1995)Atomic structure of stacked InAs quantum dots grown by metal-organic chemical-vapor depostion, , , , , , and . Journal of Vacuum Science and Technology B, (1999)Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition, , , , , , and . Appl.~Phys.~Lett., (1997)High-power quantum-dot lasers at 1100 nm, , , and . Appl. Phys. Lett., 76 (5): 556--558 (2000)High-resolution x-ray diffraction of self-organized InGaAs/GaAs quantum dot structures, , , , and . Appl.~Phys.~Lett., 68 (6): 785--787 (1996)High-gain excitonic lasing from a single InAs monolayer in bulk GaAs, , , , , , and . Appl.~Phys.~Lett., 72 (12): 1433--1435 (1998)