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Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology., , , , , , , и . ESSCIRC, стр. 356-359. IEEE, (2007)Personal communications transceiver architectures for monolithic integration., , , , , , , , и . PIMRC, стр. 363-368. (1994)Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology., , , , , и . IEEE J. Solid State Circuits, 39 (10): 1773-1777 (2004)Merged power amplifier and mixer circuit topology for radar applications in CMOS., , , , и . ESSCIRC, стр. 300-303. IEEE, (2009)A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output., , , , и . ESSCIRC, стр. 561-564. IEEE, (2003)An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS Technology., , , , , , , , , и 3 other автор(ы). ISSCC, стр. 392-610. IEEE, (2007)A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar., , , , , , , и . ISSCC, стр. 430-613. IEEE, (2007)Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology., , , , , и . ESSCIRC, стр. 308-311. IEEE, (2009)A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS., , , , и . BCICTS, стр. 194-197. IEEE, (2018)A low-power low-voltage NMOS bulk-mixer with 20 GHz bandwidth in 90 nm CMOS., , , и . ISCAS (4), стр. 385-388. IEEE, (2004)