Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM., , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (6): 1555-1563 (2015)A Cross-layer Cognitive Radio Testbed for the Evaluation of Spectrum Sensing Receiver and Interference Analysis., , , , , , and . CrownCom, page 1-6. IEEE, (2008)Design Rule Evaluation Framework Using Automatic Cell Layout Generator for Design Technology Co-Optimization., , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 27 (8): 1933-1946 (2019)A 3-nm Gate-All-Around SRAM Featuring an Adaptive Dual-Bitline and an Adaptive Cell-Power Assist Circuit., , , , , , , and . IEEE J. Solid State Circuits, 57 (1): 236-244 (2022)Subthreshold current mode matrix determinant computation for analog signal processing., , , , , and . ISCAS, page 1260-1263. IEEE, (2010)Standard Cell Design Optimization with Advanced MOL Technology in 3nm GAA Process., , , , , , , , , and 9 other author(s). VLSI Technology and Circuits, page 363-364. IEEE, (2022)3nm Gate-All-Around (GAA) Design-Technology Co-Optimization (DTCO) for succeeding PPA by Technology., , , , , , , , , and 1 other author(s). CICC, page 1-7. IEEE, (2022)A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application., , , , and . VLSI Circuits, page 1-2. IEEE, (2021)24.3 A 3nm Gate-All-Around SRAM Featuring an Adaptive Dual-BL and an Adaptive Cell-Power Assist Circuit., , , , , , , , , and 6 other author(s). ISSCC, page 338-340. IEEE, (2021)Bitline Charge-Recycling SRAM Write Assist Circuitry for $V_MIN$ Improvement and Energy Saving., , , , , , , and . IEEE J. Solid State Circuits, 54 (3): 896-906 (2019)