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A Switchable, Passively Tuneable 28 GHz to 39 GHz Upconversion Link for a 5G Repeater using a Broadside Coupler and Analog Predistortion in a 130 nm BiCMOS Technology.

, , , , , , , и . NEWCAS, стр. 30-33. IEEE, (2020)

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Petra Aufinger

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A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO., , , и . IEEE J. Solid State Circuits, 47 (9): 1974-1980 (2012)A 28 GHz Highly Accurate Phase- and Gain-Steering Transmitter Frontend for 5G Phased-Array Applications., , , , , , и . MWSCAS, стр. 432-435. IEEE, (2020)SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency., , , , и . IEEE J. Solid State Circuits, 44 (10): 2655-2662 (2009)A Switchable, Passively Tuneable 28 GHz to 39 GHz Upconversion Link for a 5G Repeater using a Broadside Coupler and Analog Predistortion in a 130 nm BiCMOS Technology., , , , , , , и . NEWCAS, стр. 30-33. IEEE, (2020)A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar., , , , , , , и . ISSCC, стр. 430-613. IEEE, (2007)A 32-48 GHz Differential YIG Oscillator With Low Phase Noise Based On a SiGe MMIC., , , и . RWS, стр. 1-3. IEEE, (2019)A High Linearity SiGe D-Band Diode Ring Mixer., , , и . BCICTS, стр. 98-101. IEEE, (2023)A 117.5-155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based Tripler., , , , , , и . IEEE J. Solid State Circuits, 58 (9): 2430-2440 (сентября 2023)Advanced thermal simulation of SiGe: C HBTs including back-end-of-line., , , , и . Microelectron. Reliab., (2016)Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology., , , , , , , и . ESSCIRC, стр. 356-359. IEEE, (2007)