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Improved model parameter compensation methods for noise-robust speech recognition.

Y. Chang, Y. Chung, и S. Park. ICASSP, стр. 561-564. IEEE, (1998)

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Chun-y ng H

Py ng-h Chang

Fu-Chang Chang

Y Winter

Sheng-Chia Chang

William Ockham's view on human capabilityS. Chang. Uni Frankfurt Main, (2009)

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Search for a light pseudoscalar Higgs boson in the dimuon decay channel in pp collisions at √s = 7 TeVS. Chatrchyan, V. Khachatryan, A. Sirunyan, A. Tumasyan, W. Adam, T. Bergauer, M. Dragicevic, J. Erö, C. Fabjan, M. Friedl и 2183 other автор(ы). Phys Rev Lett, 109 (12): 121801-121801 (сентября 2012)Fabrication of ZnSe quantum dots under Volmer-Weber mode by metalorganic chemical vapor depositionM. Liao, Y. Chang, Y. Chen, J. Hsu, J. Lin, и W. Chou. Appl.~Phys.~Lett., (1997)Improved model parameter compensation methods for noise-robust speech recognition.Y. Chang, Y. Chung, и S. Park. ICASSP, стр. 561-564. IEEE, (1998)On-line Cartesian path trajectory planning for robot manipulators.Y. Chang, T. Lee, и C. Lui. ICRA, стр. 62-67. IEEE Computer Society, (1988)Discovering Event Evolution Patterns From Document SequencesC. Wei, и Y. Chang. IEEE Transactions on Systems, Man and Cybernetics, Part A, 37 (2): 273-283 (марта 2007)Data quality challenges for person-generated health and wellness data.J. Codella, C. Partovian, H. Chang, и C. Chen. IBM J. Res. Dev., 62 (1): 3:1-3:8 (2018)Subpicosecond pulse amplification in semiconductor laser amplifiers: theory and experimentM. Hong, Y. Chang, A. Dienes, J. Heritage, и P. Delfyett. IEEE J.~Quantum~Electron., 30 (4): 1122--1131 (1994)The Physics of the B FactoriesA. Bevan, B. Golob, Th, S. Prell, B. Yabsley, K. Abe, H. Aihara, F. Anulli, N. Arnaud, T. Aushev и 2024 other автор(ы). The European Physical Journal C, (08.07.2014)Assessing the educational values of digital gamesJ. Hong, C. Cheng, M. Hwang, C. Lee, и H. Chang. Journal of Computer Assisted Learning, 25 (5): 423-437 (2009)A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high performance and high density SoC products.C. Jan, F. Al amoody, H. Chang, T. Chang, Y. Chen, N. Dias, W. Hafez, D. Ingerly, M. Jang, E. Karl и 24 other автор(ы). VLSIC, стр. 12-. IEEE, (2015)

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