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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , and . Microelectron. Reliab., (2018)Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress., , , , , , , and . IRPS, page 1-7. IEEE, (2021)Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs., , , , , , and . Microelectron. Reliab., 51 (2): 224-228 (2011)Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy., , , and . Micromachines, 5 (3): 408-419 (2014)Reliability of 70 nm metamorphic HEMTs., , , , , , and . Microelectron. Reliab., 44 (6): 939-943 (2004)Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , and 6 other author(s). Microelectron. Reliab., 49 (5): 474-477 (2009)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , and . Microelectron. Reliab., 54 (12): 2656-2661 (2014)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 2. IEEE, (2015)Reporting Strategy for VR Design Reviews., , , , and . HCI (46), volume 12428 of Lecture Notes in Computer Science, page 80-90. Springer, (2020)