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Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys, and . Phys. Rev. B, 57 (8): 4425--4431 (February 1998)Theory of $3d$ transition atom impurities in semiconductors. Ann. Rev. Mater. Sci., (1985)Self-interaction correction to density-functional approximatino for many-electron systems, and . Phys. Rev. B, (1981)Effects of linear and nonlinear piezoelectricity on the electronic properties of InAs/GaAs quantum dots, , , and . Phys.~Rev.~B, 74 (8): 081305 (2006)Electronic structures of 110-faceted self-assembled pyramidal InAs/GaAs quantum dots, , and . Phys.~Rev.~B, (1999)Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys, and . Journal of Applied Physics, 85 (1): 160-167 (1999)Electronic structure of $3d$ transition-atom impurities in semiconductors. Solid State Physics, 39, page 275-464. New York, Academic Press, (1986)Many-electron multiplet effects in the optical spectra of NiO, CoO and MnO, and . Solid State Commun., (1984)Importance of Second-Order Piezoelectric Effects in Zinc-Blende Semiconductors, , , and . Phys. Rev. Lett., (2006)Bond-length distribution in tetrahedral versus octahedral semiconductor alloys: The case of Ga$_1-x$In$_x$N, , and . Phys. Rev. B, 56 (21): 13872--13877 (December 1997)