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A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics.

M. Kong, Z. Hu, J. Gao, Z. Chen, J. Guo, S. Nafees, B. Yi, and H. Yang. ASICON, page 1-4. IEEE, (2021)

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Yang Yang

Other publications of authors with the same name

An Appraisal of Atmospheric Correction and Inversion Algorithms for Mapping High-Resolution Bathymetry Over Coral Reef Waters.Y. Huang, H. Yang, S. Tang, Y. Liu, and Y. Liu. IEEE Trans. Geosci. Remote. Sens., (2023)A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp.B. Yi, Z. Wu, J. Cheng, H. Huang, M. Kong, and H. Yang. ASICON, page 1-4. IEEE, (2021)Research and Design of the Agricultural Short-message Management System.X. Jiang, W. Gao, W. Liu, G. Zhang, H. Yang, and Y. Ping. CCTA, volume 259 of IFIP Advances in Information and Communication Technology, page 833-840. Springer, (2007)Optimal buying at the global minimum in a regime switching model.A. Yang, Y. Liu, J. Xiang, and H. Yang. Math. Soc. Sci., (2016)A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance.M. Kong, K. Huang, R. Yan, B. Yi, B. Zhang, and H. Yang. ASICON, page 1-4. IEEE, (2023)Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.B. Yi, H. Huang, H. Hu, M. Kong, Y. Guo, W. Shi, J. Cheng, and H. Yang. ASICON, page 1-4. IEEE, (2023)An Ultra-low Specific On-resistance SiC LDMOS Using Double RESURF and Field Plate Techniques.M. Kong, Z. Cheng, N. Yu, R. Jin, J. Guo, and H. Yang. ASICON, page 1-4. IEEE, (2023)The belief and plausibility functions of incomplete fuzzy covering systems.T. Feng, S. Zhang, and H. Yang. GrC, page 187-192. IEEE Computer Society, (2011)Research and Design of Online Declaration and Approval System Based on Mvc.W. Gao, H. Yang, X. Chen, Y. Ping, Z. Li, X. Jiang, and G. Zhang. CCTA, volume 259 of IFIP Advances in Information and Communication Technology, page 867-873. Springer, (2007)Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design.B. Yi, Y. Xu, L. Zheng, J. Cheng, H. Huang, M. Kong, and H. Yang. Microelectron. J., (September 2023)

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Disambiguation of "Yang, Hongqiang"

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A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics.

Please choose a person to relate this publication to

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Yang, Hongqiang"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics.

Please choose a person to relate this publication to

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Yang Yang

Other publications of authors with the same name

Disambiguation

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URL
DOI
BibTeX
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APA
Chicago
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A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics.