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Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $f_t=10.2$ GHz.

, , , , , , and . DRC, page 1-2. IEEE, (2023)

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Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $f_t=10.2$ GHz., , , , , , and . DRC, page 1-2. IEEE, (2023)Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs., , , , , , and . Microelectron. Reliab., 51 (2): 224-228 (2011)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices., , , , , , , , and . Microelectron. Reliab., 54 (12): 2656-2661 (2014)High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs., , , , , , , , and . IRPS, page 2. IEEE, (2015)Reliability of 70 nm metamorphic HEMTs., , , , , , and . Microelectron. Reliab., 44 (6): 939-943 (2004)Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz., , , , , and . DRC, page 1-2. IEEE, (2024)Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems., , , , , , , , , and 6 other author(s). Microelectron. Reliab., 49 (5): 474-477 (2009)