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Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.

R. Ritzenthaler, T. Schram, E. Bury, J. Mitard, L. Ragnarsson, G. Groeseneken, N. Horiguchi, A. Thean, A. Spessot, C. Caillat, V. Srividya, и P. Fazan. ESSDERC, стр. 242-245. IEEE, (2012)

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Jérôme Huppertz

Modulation inflammatorischer Prozesse mittels GPI-verankerter Chemokin-AnalogaJ. Huppertz. Uni München, (2009)

Jérôme Krets

Jérôme Clerc

Jérôme Boucher

Jérôme Feret

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CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies.S. Chen, D. Linten, G. Hellings, M. Simicic, B. Kaczer, T. Chiarella, H. Mertens, J. Mitard, A. Mocuta, и N. Horiguchi. IRPS, стр. 1-7. IEEE, (2019)Detecting Transistor Defects in Medical Systems Using a Multi Model Ensemble of Convolutional Neural Networks.H. Koçak, A. Naskali, Ö. Pinarer, и J. Mitard. IEEE BigData, стр. 4731-4737. IEEE, (2021)Scaling CMOS beyond Si FinFET: an analog/RF perspective.B. Parvais, G. Hellings, M. Simicic, P. Weckx, J. Mitard, D. Jang, V. Deshpande, B. van Liempc, A. Veloso, A. Vandooren и 4 other автор(ы). ESSDERC, стр. 158-161. IEEE, (2018)Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.R. Ritzenthaler, T. Schram, E. Bury, J. Mitard, L. Ragnarsson, G. Groeseneken, N. Horiguchi, A. Thean, A. Spessot, C. Caillat и 2 other автор(ы). ESSDERC, стр. 242-245. IEEE, (2012)Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm.S. Choi, D. Park, M. Kim, S. Bang, J. Kim, S. Jin, K. Huh, D. Kim, J. Mitard, C. Han и 1 other автор(ы). Adv. Intell. Syst., (января 2023)Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.G. Reimbold, J. Mitard, X. Garros, C. Leroux, G. Ghibaudo, и F. Martin. Microelectron. Reliab., 47 (4-5): 489-496 (2007)Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.H. Oh, A. Belmonte, M. Perumkunnil, J. Mitard, N. Rassoul, G. Donadio, R. Delhougne, A. Furnémont, G. Kar, и W. Dehaene. ESSDERC, стр. 275-278. IEEE, (2021)Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies.G. Rzepa, M. Karner, O. Baumgartner, G. Strof, F. Schanovsky, F. Mitterbauer, C. Kernstock, H. Karner, P. Weckx, G. Hellings и 10 other автор(ы). IRPS, стр. 1-6. IEEE, (2021)Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs.T. Romeo, L. Pantisano, E. Simoen, R. Krom, M. Togo, N. Horiguchi, J. Mitard, A. Thean, G. Groeseneken, C. Claeys и 1 other автор(ы). ESSDERC, стр. 330-333. IEEE, (2012)Isolation of nanowires made on bulk wafers by ground plane doping.R. Ritzenthaler, H. Mertens, A. Keersgieter, J. Mitard, D. Mocuta, и N. Horiguchi. ESSDERC, стр. 300-303. IEEE, (2017)

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Please choose a person to relate this publication to

Jérôme Huppertz

Jérôme Krets

Jérôme Clerc

Jérôme Boucher

Jérôme Feret

Другие публикации лиц с тем же именем

Disambiguation