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Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices., , , , , and . NVMTS, page 1-4. IEEE, (2018)Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices., , , , , and . ESSDERC, page 164-167. IEEE, (2016)Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array., , , , , , , , , and 3 other author(s). CoRR, (2023)50x Endurance Improvement in TaOx RRAM by Extrinsic Doping., , and . IMW, page 1-4. IEEE, (2021)Demonstration of neuromorphic sequence learning on a memristive array., , , , , , and . NICE, page 108-114. ACM, (2023)Controllability of Relaxation Behavior in Ag-based Diffusive Memristors., , and . DRC, page 1-2. IEEE, (2023)Tuning the Memory Window of TaOx ReRAM Using the RF Sputtering Power., , , and . ISCAS, page 1-5. IEEE, (2021)Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances., , , , and . ISCAS, page 91-95. IEEE, (2022)System model of neuromorphic sequence learning on a memristive crossbar array., , , , , and . Neuromorph. Comput. Eng., 3 (2): 24002 (June 2023)Ternary Łukasiewicz logic using memristive devices., , , , , , , and . Neuromorph. Comput. Eng., 3 (4): 44001 (December 2023)