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Optical properties of InAs quantum dots in a Si matrix, , , , , , , , , and 3 other author(s). Appl. Phys. Lett., 74 (12): 1701--1703 (1999)Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, , , , , , , , , and 8 other author(s). J.~Electron.~Mat., (1999)Luminescence and Structural Properties of (In,Ga)As/GaAs Quantum Dots, , , , , , , , , and 8 other author(s). Proc. 22nd Int. Conf. Phys. Semicond., (ICPS-22), (Vancouver, Canada, 1994), Singapore, World Scientific, (1995)Mechanism of an S-shaped current-voltage characteristic in multilayer isotopic GaAs-AlGaAs heterostructure, , , , and . Sov.~Phys.~Semicond., (1987)InAs-GaAs quantum pyramid lasers: in situ growth, radiative lifetimes and polarization properties, , , , , , , , , and 4 other author(s). Jpn.~J.~Appl.~Phys., (1996)Low threshold injection lasers based on vertically coupled quantum dots, , , , , , , , , and 8 other author(s). J. Crystal Growth, 175 (2): 689--695 (1997)Response to ``Comment on `Ground state exciton lasing in CdSesubmonolayers inserted in a ZnSe matrix' '' Appl. Phys.Lett. 70, 2765 (1997), , , , , , , , and . Appl.~Phys.~Lett., (1997)Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth, , , , , , , , , and 10 other author(s). Phys.~Rev.~B, (1996)Energy relaxation by multiphonon process in InAs/GaAs quantum dots, , , , , , , and . Phys.~Rev.~B, 56 (16): 10435 (October 1997)Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix, , , , , , , , , and 4 other author(s). Appl.~Phys.~Lett., (1998)