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True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices., , , and . IEEE J. Emerg. Sel. Topics Circuits Syst., 5 (2): 214-221 (2015)Characterization of reset state through energy activation study in Ge-GST based ePCM., , , , , , and . ESSDERC, page 229-232. IEEE, (2022)Thermal switching of TiO2-based RRAM for parameter extraction and neuromorphic engineering., , , , , and . ESSCIRC, page 133-136. IEEE, (2022)A Hybrid Memristor/CMOS SNN for Implementing One-Shot Winner-Takes-All Training., , , , , and . ISCAS, page 210-214. IEEE, (2022)Modeling of oxide-based ECRAM programming by drift-diffusion ion transport., and . IMW, page 1-4. IEEE, (2021)Thermal-Induced Multi-State Memristors for Neuromorphic Engineering., , , , , , and . ISCAS, page 1-5. IEEE, (2023)Closed-Loop In-Memory Computing for Energy-Efficient Matrix Eigendecomposition., , and . MetroXRAINE, page 1-6. IEEE, (2023)Fast Solution of Linear Systems with Analog Resistive Switching Memory (RRAM)., , and . ICRC, page 120-124. IEEE, (2019)Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference., , , , , and . AICAS, page 1-4. IEEE, (2022)Experimental verification and benchmark of in-memory principal component analysis by crosspoint arrays of resistive switching memory., , , , , , , and . ISCAS, page 326-330. IEEE, (2022)