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Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

W. Chen, X. Ma, B. Hou, S. Zhao, J. Zhu, J. Zhang, and Y. Hao. Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)

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Changbao Hou

Bo Hou

Dongchao Hou

Jun Hou

Ming Hou

Other publications of authors with the same name

Finite-Time Command Filtered Backstepping Algorithm-Based Pitch Angle Tracking Control for Wind Turbine Hydraulic Pitch Systems.H. Ren, G. Deng, B. Hou, S. Wang, and G. Zhou. IEEE Access, (2019)A Saliency Guided Semi-Supervised Building Change Detection Method for High Resolution Remote Sensing Images.B. Hou, Y. Wang, and Q. Liu. Sensors, 16 (9): 1377 (2016)JAMIOLAS 3.0: Supporting Japanese Mimicry and Onomatopoeia Learning Using Sensor Data.B. Hou, H. Ogata, M. Miyata, M. Li, and Y. Liu. Int. J. Mob. Blended Learn., 2 (1): 40-54 (2010)Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature.Q. Zhu, X. Ma, B. Hou, M. Wu, J. Zhu, L. Yang, M. Zhang, and Y. Hao. IEEE Access, (2020)Supporting Seamless Learning Using Ubiquitous Learning Log System.H. Ogata, N. Uosaki, M. Li, B. Hou, and K. Mouri. Seamless Learning in the Age of Mobile Connectivity, Springer, (2016)SCROLL: System for Capturing and Reminding of Ubiqitous Learning Log.M. Li, H. Ogata, B. Hou, and N. Uosaki. WMUTE, page 328-330. IEEE Computer Society, (2012)Using SenseCam for Capturing Ubiquitous Learning Log.B. Hou, H. Ogata, M. Li, N. Uosaki, and K. Mouri. IIAI-AAI, page 267-272. IEEE Computer Society, (2012)Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier.H. Lu, X. Ma, B. Hou, L. Yang, T. Huo, Z. Si, and Y. Hao. ICTA, page 78-79. IEEE, (2021)First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.H. Lu, L. Zhou, L. Deng, L. Yang, B. Hou, X. Ma, and Y. Hao. ICTA, page 30-31. IEEE, (2022)Hierarchical Resource Allocation for RAN slicing in Power Wireless Private Network.W. Zheng, W. Shao, W. He, J. Zhang, B. Hou, and Y. Zhang. ICSPCC, page 1-6. IEEE, (2021)

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Disambiguation of "Hou, Bin"

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Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Please choose a person to relate this publication to

Changbao Hou

Bo Hou

Dongchao Hou

Jun Hou

Ming Hou

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hou, Bin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.

Please choose a person to relate this publication to

Changbao Hou

Bo Hou

Dongchao Hou

Jun Hou

Ming Hou

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress.