Author of the publication

Analysis and Design of Power-Efficient H-Band CMOS Frequency Doubler Employing Gain Boosting and Harmonic Enhancing Techniques.

, , , and . IEEE Access, (2023)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core., , , , and . IEEE Access, (2021)Analysis and Design of Power-Efficient H-Band CMOS Frequency Doubler Employing Gain Boosting and Harmonic Enhancing Techniques., , , and . IEEE Access, (2023)An LPWAN Radio with a Reconfigurable Data/Duty-Cycled-Wake-Up Receiver., , , , , , , , , and 1 other author(s). ISSCC, page 404-406. IEEE, (2022)Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique., , , , , and . IEEE J. Solid State Circuits, 56 (11): 3388-3398 (2021)A 250-GHz Wideband Direct-Conversion CMOS Receiver Adopting Baseband Equalized Low-Loss Resistive Passive Mixer., , , , and . IEEE Trans. Circuits Syst. II Express Briefs, 70 (10): 3852-3856 (October 2023)A 915 MHz, 499 μW, -99 dBm, and 100 kbps BFSK Direct Conversion Receiver., , , , , , , , and . ESSCIRC, page 209-212. IEEE, (2019)A 293/440 GHz Push-Push Double Feedback Oscillators with 5.0/-3.9 dBm Output Power and 2.9/0.6 % DC-to-RF Efficiency in 65 nm CMOS., , , and . VLSI Circuits, page 1-2. IEEE, (2020)H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized Gmax-Core and Transmission Line-Based Zero-Degree Power Combining Networks., , and . IEEE J. Solid State Circuits, 58 (11): 3089-3102 (November 2023)29.7 A 490GHz 32mW Fully Integrated CMOS Receiver Adopting Dual-Locking FLL., , , , , and . ISSCC, page 452-454. IEEE, (2020)245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-and 4-way Power Combining., , , , and . A-SSCC, page 1-3. IEEE, (2021)