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Local Stress Analysis of Epitaxial Laterally-Overgrown GaN, , , , , , and . Jpn.~J.~Appl.~Phys., (2000)Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN, , , , , , , , and . Appl. Phys. Lett., 74 (22): 3320--3322 (1999)InAs/GaAs quantum dots: Radiative recombination from zero-dimensional states, , , , , , , , , and 6 other author(s). phys.~status solidi (b), (1995)Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques, , and . Journal of Applied Physics, (1991)Luminescence and Structural Properties of (In,Ga)As/GaAs Quantum Dots, , , , , , , , , and 8 other author(s). Proc. 22nd Int. Conf. Phys. Semicond., (ICPS-22), (Vancouver, Canada, 1994), Singapore, World Scientific, (1995)A practical method for obtaining prior distributions in reliability., , and . IEEE Trans. Reliability, 54 (2): 262-269 (2005)OMI building blocks and developments for future high performance processing systems in the aerospace and automotive fields: DSP, SMCS and VIRTUOSO., , , , , , , , and . ICECS, page 610-613. IEEE, (1996)