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Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study., , , , , , , , , and 2 other author(s). ESSCIRC, page 143-146. IEEE, (2021)Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices., , , , , , , , , and 5 other author(s). ESSDERC, page 144-147. IEEE, (2017)Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions., , , , , , , , , and 2 other author(s). ESSDERC, page 255-258. IEEE, (2021)Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)., , , , , , , , , and 4 other author(s). IRPS, page 1-8. IEEE, (2023)Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays., , , , , , and . IRPS, page 1-7. IEEE, (2024)Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2021)Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements., , , , , , , , , and . ESSCIRC, page 125-128. IEEE, (2022)Ferroelectric Tunneling Junctions for Edge Computing., , , , , , , , , and 3 other author(s). ISCAS, page 1-5. IEEE, (2021)Thermal laser attack and high temperature heating on HfO2-based OxRAM cells., , , , and . IOLTS, page 85-89. IEEE, (2017)Memory Window in Si: HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes., , , , , , , , , and . IMW, page 1-4. IEEE, (2023)