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A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO2 layer.

, , , , , , and . IEICE Electron. Express, 16 (19): 20190445 (2019)

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Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells., , , , and . ASICON, page 1-3. IEEE, (2019)A snapback-free RC-LIGBT with separated LIGBT and FWD., , , , and . IEICE Electron. Express, 19 (17): 20220300 (2022)SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS., , , , , , and . ISCAS, page 1-5. IEEE, (2024)Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells., , , , and . ASICON, page 219-221. IEEE, (2017)System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure., , , , , and . DSA, page 92-97. IEEE, (2017)A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO2 layer., , , , , , and . IEICE Electron. Express, 16 (19): 20190445 (2019)The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology., , , , , , , , , and 1 other author(s). IRPS, page 1-6. IEEE, (2023)A new full current mode sense amplifier with compensation circuit., , , and . ASICON, page 645-648. IEEE, (2011)Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET., , , , , , , , and . IRPS, page 1-5. IEEE, (2023)