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Coexistence of topological and normal insulating phases in electro-optically tuned InAs/GaSb bilayer quantum wells

, , , , , , , , , and . Phys. Rev. B, 109 (12): L121303 (Mar 27, 2024)
DOI: 10.1103/PhysRevB.109.L121303

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Spectroscopy Of A High-Mobility GaAs--Ga$_1-x$Al$_x$As One-Side-Modulation-Doped Quantum-Well, , , , , , , and . Physical Review B, (1986)Exploring the phase diagram of InAs/GaSb/InAs trilayer quantum wells, , , , , and . Phys. Rev. B, 105 (15): 155304 (Apr 11, 2022)Electric-Field-Induced Localization and Oscillatory Electro-Optical Properties of Semiconductor Superlattices, , and . Phys.~Rev.~Lett., 60 (3): 220 (1988)Phonon-assisted capture and intradot Auger relaxation in quantum dots, and . Appl.~Phys.~Lett., (1999)Energy relaxation in quantum dots, , and . Phys.~Rev.~B, (2002)Super-lattice band-structure in the envelope-function approximation. Physical Review B, (1981)Band-Gap Renormalization in a GaAs--Ga$_1-x$Al$_x$As Modulation Doped Quantum-Well, , , , , , and . Solid State Communications, (1986)Observation of Carrier Localization in Intentionally Disordered GaAs/GaAlAs Superlattices, , , and . Phys.~Rev.~Lett., (1986)Evaluation of some scattering times for electrons in unbiased and biased single- and multiple quantum-well structures, and . Phys.~Rev.~B, (1989)Polaron lifetime and energy relaxation in semiconductor quantum dots, , and . Phys.~Rev.~B, (2000)